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| HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Typical Applications The HMC315 / HMC315E is ideal for: * Fiber Optic OC-48 Systems * Microwave Test Instrumentation * Broadband Mobile Radio Platforms Features Saturated Output Power: +17 dBm Output IP3: +33 dBm Gain: 15 dB Single Supply: +5V to +7V Ultra Small Package: SOT26 Functional Diagram General Description The HMC315 & HMC315E are ultra broadband GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single positive supply. The surface mount SOT26 amplifier can be used as a broadband gain stage, or used with external matching for optimized narrow band applications. The Darlington configuration results in reduced sensitivity to normal process variations and provides a good 50ohm input/output port match. The amplifier provides 15 dB of gain and +17 dBm of saturated power while operating from a single positive +7V supply. Electrical Specifications, TA = +25 C, As a Function of Vcc Vcc = +5V Parameter Min. Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (OIP3) @ 1.0 GHz Noise Figure Supply Current (Icc) 7 3 18 8 10 23 11 Typ. DC - 7 14 0.015 10 7 21 11 13 26 6.5 30 17 0.025 7 3 18 13 15 30 11 Max. Min. Typ. DC - 7 15 0.015 10 7 21 16 17.5 33 6.5 50 18 0.025 Max. GHz dB dB/C dB dB dB dBm dBm dBm dB mA Vcc = +7V Units 8 - 68 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Gain & Return Loss @ Vcc= +7V 20 15 10 RESPONSE (dB) 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) Gain & Return Loss @ Vcc= +5V 20 15 10 RESPONSE (dB) 8 AMPLIFIERS - SMT 8 - 69 S11 S21 S22 5 0 -5 -10 -15 -20 -25 0 1 2 3 4 S11 S21 S22 5 6 7 8 FREQUENCY (GHz) Gain vs. Temperature @ Vcc= +7V 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C Gain vs. Temperature @ Vcc= +5V 20 18 16 14 GAIN (dB) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +60 C -40 C Input & Output Return Loss vs. Vcc Bias 0 Reverse Isolation vs. Vcc Bias 0 -5 ISOLATION (dB) -10 -15 -20 -25 -30 S12 Vcc=7V S12 Vcc=5V -5 RETURN LOSS (dB) -10 -15 S11 Vcc=7V S22 Vcc=7V S11 Vcc=5V S22 Vcc=5V -20 -25 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT P1dB vs. Temperature @ Vcc= +7V 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +60 C -40 C P1dB vs. Temperature @ Vcc= +5V 20 18 16 14 P1dB (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +60 C -40 C Psat vs. Temperature @ Vcc= +7V 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25 C +60 C -40 C Psat vs. Temperature @ Vcc= +5V 20 18 16 14 Psat (dBm) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 FREQUENCY (GHz) +25C +60C -40C Output IP3 vs. Temperature @ Vcc= +7V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0 1 2 3 Output IP3 vs. Temperature @ Vcc= +5V 30 28 26 24 IP3 (dBm) 22 20 18 16 +25 C +60 C -40 C IP3 (dBm) +25 C +60 C -40 C 14 12 10 5 6 7 8 0 1 2 3 4 5 6 7 8 4 FREQUENCY (GHz) FREQUENCY (GHz) 8 - 70 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Power Compression @ 1.0 GHz, Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 1.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) 8 AMPLIFIERS - SMT 8 - 71 Pout (dBm) Gain (dB) PAE (%) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 8 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Power Compression @ 3.0 GHz, Vcc= +7V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 3.0 GHz, Vcc= +5V 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -20 Pout (dBm), GAIN (dB), PAE (%) Pout Gain (dB) PAE (%) Pout (dBm) Gain (dB) PAE (%) -6 -4 -2 0 2 4 6 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz 8 AMPLIFIERS - SMT Application Circuit Absolute Maximum Ratings Collector Bias Voltage (Vcc) RF Input Power (RFin)(Vcc = +7.0 Vdc) Junction Temperature Continuous Pdiss (T = 60 C) (derate 4.14 mW/C above 60 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +7.5 Vdc +11 dBm 150 C 0.373 W 242 C/W -65 to +150 C -40 to +60 C Class 1A Note: 1. Select Rbias to achieve desired Vcc voltage on Pin 1. 2. External Blocking Capacitors are required on Pins 1 & 3. Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND Package Information Part Number HMC315 HMC315E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H315 XXXX 315E XXXX [2] [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX 8 - 72 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC315 / 315E v02.0605 GaAs InGaP HBT MMIC DARLINGTON AMPLIFIER, DC - 7.0 GHz Evaluation PCB 8 AMPLIFIERS - SMT List of Materials for Evaluation PCB 104217 [1] Item J1, J2 U1 PCB [2] Description PCB Mount SMA Connector HMC315 / HMC315E Amplifier Evaluation PCB 1.5" x 1.5" [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Roger 4350 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 73 |
Price & Availability of HMC315E
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